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ME25N10F-G Datasheet N-channel MOSFET

Manufacturer: Matsuki

Overview: ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

PIN CONFIGURATION

Key Features

  • RDS(ON)≦85mΩ@VGS=10V.
  • RDS(ON)≦105mΩ@VGS=5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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ME25N10F-G Distributor