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ME25N15AL-G Datasheet N-channel MOSFET

Manufacturer: Matsuki

Overview: ME25N15AL/ME25N15AL-G N- Channel 150V (D-S) MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME25N15AL is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON) ≦78mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

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ME25N10F N-Channel MOSFET
ME25N10F-G N-Channel MOSFET
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ME25N15AL-G Distributor