ME2N70023E1-G mosfet equivalent, n-channel mosfet.
* RDS(ON) ≦4Ω@VGS=10V
* RDS(ON) ≦4Ω@VGS=4.5V
* ESD Protection HBM≧1KV
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resi.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
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