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ME2N7002F1KW Datasheet Dual N-channel MOSFET

Manufacturer: Matsuki

Overview: ME2N7002F1KW/ME2N7002F1KW -G Dual N-Channel 30V (D-S) MOSFET, ESD Protection.

Datasheet Details

Part number ME2N7002F1KW
Manufacturer Matsuki
File Size 903.77 KB
Description Dual N-Channel MOSFET
Datasheet ME2N7002F1KW-Matsuki.pdf

General Description

The ME2N7002F1KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

PIN CONFIGURATION

Key Features

  • RDS(ON)≦8Ω@VGS=4V.
  • RDS(ON)≦13Ω@VGS=2.5V.
  • ESD Protection HBM 1KV.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

ME2N7002F1KW Distributor