ME2N7002F1W-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦8Ω@VGS=4V
* RDS(ON)≦13Ω@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
c.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
(SOT-323) Top Vi.
The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION
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