ME3500-G, ME3500 Datasheet - Matsuki

ME3500-G N- & P-Channel 30V (D-S) MOSFET

The ME3500 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application .

ME3500-G Features

* RDS(ON) ≦35mΩ@VGS=10V (N-Ch)

* RDS(ON) ≦52mΩ@VGS=4.5V (N-Ch)

* RDS(ON) ≦70mΩ@VGS=-10V (P-Ch)

* RDS(ON) ≦95mΩ@VGS=-4.5V (P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Ma

ME3500-Matsuki.pdf

ME3500-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME3500-G, ME3500. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME3500-G, ME3500

Manufacturer:

Matsuki

File Size:

0.96 MB

Description:

N- & p-channel 30v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME3500-G, ME3500.
Please refer to the document for exact specifications by model.

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TAGS

ME3500-G ME3500 P-Channel 30V D-S MOSFET Matsuki

ME3500-G Distributor