ME35N06T-G mosfet equivalent, n-channel 60v (d-s) mosfet.
* RDS(ON)≦32mΩ@VGS=10V
* RDS(ON)≦40mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curre.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
e Ordering Infor.
The ME35N06T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance.
PIN CONFIGURATION
(TO-220) Top Vie.
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