Datasheet4U Logo Datasheet4U.com

ME35N10-G Datasheet N-channel 100v (d-s) MOSFET

Manufacturer: Matsuki

Overview: ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Key Features

  • RDS(ON)≦22mΩ@VGS=10V.
  • RDS(ON)≦26mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

Part Number Description
ME35N10 N-Channel 100V (D-S) MOSFET
ME35N06 N-Channel 60V (D-S) MOSFET
ME35N06-G N-Channel 60V (D-S) MOSFET
ME35N06F N-Channel 60V (D-S) MOSFET
ME35N06F-G N-Channel 60V (D-S) MOSFET
ME35N06P N-Channel 60V (D-S) MOSFET
ME35N06P-G N-Channel 60V (D-S) MOSFET
ME35N06T N-Channel 60V (D-S) MOSFET
ME35N06T-G N-Channel 60V (D-S) MOSFET
ME3500 N- & P-Channel 30V (D-S) MOSFET

ME35N10-G Distributor