ME35N10-G, ME35N10 Datasheet - Matsuki

ME35N10-G N-Channel 100V (D-S) MOSFET

The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. PIN CO.

ME35N10-G Features

* RDS(ON)≦22mΩ@VGS=10V

* RDS(ON)≦26mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* DC/DC Converter

* Load Switch

* LCD/ LED Display inverter (TO-252-3L) Top View

* Th

ME35N10-Matsuki.pdf

ME35N10-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME35N10-G, ME35N10. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME35N10-G, ME35N10

Manufacturer:

Matsuki

File Size:

1.11 MB

Description:

N-channel 100v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME35N10-G, ME35N10.
Please refer to the document for exact specifications by model.

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ME35N10-G ME35N10 N-Channel 100V D-S MOSFET Matsuki

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