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ME4435-G - P-Channel 30-V (D-S) MOSFET

Description

The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦20mΩ@VGS=-10V.
  • RDS(ON)≦35mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME4435-G
Manufacturer Matsuki
File Size 732.75 KB
Description P-Channel 30-V (D-S) MOSFET
Datasheet download datasheet ME4435-G Datasheet

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www.DataSheet.co.kr ME4435(-G) P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦20mΩ@VGS=-10V ● RDS(ON)≦35mΩ@VGS=-4.
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