Datasheet Summary
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ME4435(-G)
P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
Features
- RDS(ON)≦20mΩ@VGS=-10V
- RDS(ON)≦35mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
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