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ME4435 - P-Channel 30-V (D-S) MOSFET

Description

The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -30V/-9.1A,RDS(ON)=20mΩ@VGS=-10V.
  • -30V/-6.9A,RDS(ON)=35mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME4435
Manufacturer Matsuki
File Size 397.72 KB
Description P-Channel 30-V (D-S) MOSFET
Datasheet download datasheet ME4435 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet.co.kr ME4435 P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● -30V/-9.1A,RDS(ON)=20mΩ@VGS=-10V ● -30V/-6.9A,RDS(ON)=35mΩ@VGS=-4.
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