ME4856-G mosfet equivalent, n-channel 30-v(d-s) mosfet.
* RDS(ON)≦6mΩ@VGS=10V
* RDS(ON)≦8.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curre.
* Power Management in Note book
* Battery Powered System
* DC/DC Converter
* Load Switch
e Ordering Inf.
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