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ME4856-G - N-Channel 30-V(D-S) MOSFET

Matsuki

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Datasheet Details

Part number	ME4856-G
Manufacturer	Matsuki
File Size	383.41 KB
Description	N-Channel 30-V(D-S) MOSFET
Datasheet	ME4856-G-Matsuki.pdf

ME4856-G Product details

Description

The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

RDS(ON)≦6mΩ@VGS=10V.
RDS(ON)≦8.5mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Feb 9, 2015 |