900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Matsuki

ME50N06A-G Datasheet Preview

ME50N06A-G Datasheet

N-Channel MOSFET

No Preview Available !

N- Channel 60V (D-S) MOSFET
ME50N06A/ME50N06A-G
GENERAL DESCRIPTION
The ME50N06A is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as LCD inverter, computer power
management and DC to DC converter circuits which need low in-line
power loss.
PIN CONFIGURATION
(TO-252-3L)
Top View
FEATURES
RDS(ON)22mΩ@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
Secondary Synchronous Rectification
* The Ordering Information: ME50N06A (Pb-free)
ME50N06A-G (Green product-Halogen free)
Absolute Maximu(GmreRenaptriondgucst) (TC=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25
TC=70
Pulsed Drain Current
Maximum Power Dissipation
TC=25
TC=70
Operating Junction Temperature
Thermal Resistance-Junction to Case*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJC
Maximum Ratings
60
±20
35.1
28.1
140
59.5
38.1
-55 to 150
2.1
* Notes: The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
/W
DCC
正式發行
Dec, 2015-Ver1.4
01




Matsuki

ME50N06A-G Datasheet Preview

ME50N06A-G Datasheet

N-Channel MOSFET

No Preview Available !

N- Channel 60V (D-S) MOSFET
ME50N06A/ME50N06A-G
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol Parameter
Conditions
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
RDS(ON)
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
Drain-Source On-State Resistancea VGS=10V, ID= 50A
VSD Diode Forward Voltage
IS=50A, VGS=0V
DYNAMIC
Min Typ Max Unit
60 V
2 4V
±100 nA
1 μA
17 22
1.0 1.2 V
Qg Total Gate Charge
VDD=48V, VGS=10V, ID=50A
37.1
Qg Total Gate Charge
10.9
Qgs Gate-Source Charge
VDD=48V, VGS=4.5V, ID=50A
14.3
Qgd Gate-Drain Charge
8.3
Ciss
Input capacitance
2286
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1MHz
172
Crss
Reverse Transfer Capacitance
53
td(on)
Turn-On Delay Time
27.7
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDS=30V, VGS=10V,
RG=3.6Ω, RL=30Ω
ID=1A
5.1
54.2
tf Turn-Off Fall Time
5.5
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
nC
pF
ns
Dec, 2015-Ver1.4
DCC
正式發行
02


Part Number ME50N06A-G
Description N-Channel MOSFET
Maker Matsuki
Total Page 5 Pages
PDF Download

ME50N06A-G Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 ME50N06A-G N-Channel MOSFET
Matsuki





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy