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ME50N06A-G - N-Channel MOSFET

Download the ME50N06A-G datasheet PDF. This datasheet also covers the ME50N06A variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦22mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME50N06A-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME50N06A-G
Manufacturer Matsuki
File Size 1.14 MB
Description N-Channel MOSFET
Datasheet download datasheet ME50N06A-G Datasheet

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Other Datasheets by Matsuki

Part Number Description
ME50N06A N-Channel MOSFET
ME50N06T N-Channel MOSFET
ME50N06T-G N-Channel MOSFET
ME50N02 N-Channel MOSFET
ME50N02-G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N- Channel 60V (D-S) MOSFET ME50N06A/ME50N06A-G GENERAL DESCRIPTION The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.