ME50N06A-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦22mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
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* Power Management
* DC/DC Converter
* LCD TV & Monitor Display inverter
* CCFL inverter
* Secondary.
The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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