ME50N06A-G Key Features
- RDS(ON)≦22mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
| Part Number | Description |
|---|---|
| ME50N06A | N-Channel MOSFET |
| ME50N06T | N-Channel MOSFET |
| ME50N06T-G | N-Channel MOSFET |
| ME50N02 | N-Channel MOSFET |
| ME50N02-G | N-Channel MOSFET |