ME50N08-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦8.5mΩ@VGS=10V
* RDS(ON)≦12mΩ@VGS=6V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curren.
* Power Management
* DC/DC Converter
* Load Switch
* Th Ordering Information: ME50N08 (Pb-free) ME50N08-G (.
The ME50N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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