ME55N06A-G, ME55N06A Datasheet - Matsuki

ME55N06A-G N-Channel 75-V (D-S) MOSFET

The ME55N06A is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular p.

ME55N06A-G Features

* RDS(ON)≦9.5mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter PIN CONFIGURATION (TO-252

ME55N06A-Matsuki.pdf

ME55N06A-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME55N06A-G, ME55N06A. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME55N06A-G, ME55N06A

Manufacturer:

Matsuki

File Size:

0.98 MB

Description:

N-channel 75-v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME55N06A-G, ME55N06A.
Please refer to the document for exact specifications by model.

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ME55N06A-G ME55N06A N-Channel 75-V D-S MOSFET Matsuki

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