ME6970D-G, ME6970D Datasheet - Matsuki

ME6970D-G Dual N-Channel MOSFET

The ME6970D Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as c.

ME6970D-G Features

* RDS(ON)≦22mΩ@VGS=4.5V

* RDS(ON)≦23mΩ@VGS=4.0V

* RDS(ON)≦26mΩ@VGS=3.0V

* RDS(ON)≦29mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Port

ME6970D-Matsuki.pdf

ME6970D-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME6970D-G, ME6970D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME6970D-G, ME6970D

Manufacturer:

Matsuki

File Size:

1.02 MB

Description:

Dual n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME6970D-G, ME6970D.
Please refer to the document for exact specifications by model.

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ME6970D-G ME6970D Dual N-Channel MOSFET Matsuki

ME6970D-G Distributor