ME6980ED-G, ME6980ED Datasheet - Matsuki

ME6980ED-G Dual N-Channel MOSFET

The ME6980ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application s.

ME6980ED-G Features

* RDS(ON)≦14.5mΩ@VGS=4.5V

* RDS(ON)≦15mΩ@VGS=4.0V

* RDS(ON)≦17mΩ@VGS=3.1V

* RDS(ON)≦20mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Po

ME6980ED-Matsuki.pdf

ME6980ED-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME6980ED-G, ME6980ED. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME6980ED-G, ME6980ED

Manufacturer:

Matsuki

File Size:

1.14 MB

Description:

Dual n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME6980ED-G, ME6980ED.
Please refer to the document for exact specifications by model.

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ME6980ED-G ME6980ED Dual N-Channel MOSFET Matsuki

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