ME6986ED-G, ME6986ED Datasheet - Matsuki

ME6986ED-G Dual N-Channel MOSFET

The ME6986ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application s.

ME6986ED-G Features

* RDS(ON)≦13.5mΩ@VGS=4.5V

* RDS(ON)≦18mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load

ME6986ED-Matsuki.pdf

ME6986ED-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME6986ED-G, ME6986ED. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME6986ED-G, ME6986ED

Manufacturer:

Matsuki

File Size:

795.29 KB

Description:

Dual n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME6986ED-G, ME6986ED.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ME6986ED Dual N-Channel MOSFET (Matsuki)

ME6980ED Dual N-Channel MOSFET (Matsuki)

ME6980ED Dual N-Channel MOSFET (VBsemi)

ME6980ED-G Dual N-Channel MOSFET (Matsuki)

ME6982ED Dual N-Channel MOSFET (Matsuki)

ME6982ED-G Dual N-Channel MOSFET (Matsuki)

ME6987-G Dual P-Channel MOSFET (Matsuki)

ME6970 Dual N-Channel MOSFET (Matsuki)

TAGS

ME6986ED-G ME6986ED Dual N-Channel MOSFET Matsuki

ME6986ED-G Distributor