ME6986ED-G mosfet equivalent, dual n-channel mosfet.
* RDS(ON)≦13.5mΩ@VGS=4.5V
* RDS(ON)≦18mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cu.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
O.
The ME6986ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are.
Image gallery
Download