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ME70N03S-G Datasheet 30v N-channel Enhancement Mode MOSFET

Manufacturer: Matsuki

Overview: ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are

Key Features

  • RDS(ON)≦6.6mΩ@VGS=10V.
  • RDS(ON)≦11mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current particularly suited for low voltage.

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