ME7686-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦10.5mΩ@VGS=10V
* RDS(ON)≦18mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.
* Power Management in Note book
* NB/MB High side switching
* Battery Powered System
* DC/DC Converter <.
The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.
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