ME7806S-G mosfet equivalent, n-channel mosfet.
* RDS(ON) ≦8.5mΩ@VGS=10V
* RDS(ON) ≦16.5mΩ@VGS=4.5V
APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* L.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
P.
The ME7806S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly.
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