Download the ME8107-G datasheet PDF.
This datasheet also covers the ME8107 variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Key Features
RDS(ON)≦7.2mΩ@VGS=-10V.
RDS(ON)≦12mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Full PDF Text Transcription for ME8107-G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
ME8107-G. For precise diagrams, and layout, please refer to the original PDF.
ME8107/ME8107-G P-Channel Enhancement Mode MOSFET, ESD Protected GENERAL DESCRIPTION The ME8107 is the P-Channel logic enhancement mode power field effect transistors are...
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he P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON)≦7.2mΩ@VGS=-10V ● RDS(ON)≦12mΩ@VGS=-4.
ME8107-G Datasheet
