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ME90N03-G Datasheet N-channel MOSFET

Manufacturer: Matsuki

Overview: ME90N03/ME90N03-G N-Channel 30V(D-S) MOSFET, ESD Protected GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ME90N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • RDS(ON)≦4.8mΩ@VGS=10V.
  • RDS(ON)≦9mΩ@VGS=4.5V.
  • ESD Protected.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

More Datasheets from Matsuki

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ME90N03-G Distributor