ME95P03-G mosfet equivalent, p-channel mosfet.
* RDS(ON)≦5.6mΩ@VGS=-20V
* RDS(ON)≦6mΩ@VGS=-10V
* RDS(ON)≦8mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-re.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
* The Ordering I.
The ME95P03 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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