Download the DS1245AB datasheet PDF.
This datasheet also covers the DS1245Y variant, as both devices belong to the same 1024k nonvolatile sram family and are provided as variant models within a single manufacturer datasheet.
Description
A0 - A16
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC GND
- Power (+5V) - Ground
NC - No Connect
1 of 10
DS1245Y/AB
DESCRIPTION
The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131
Features
- 10 years minimum data retention in the
absence of external power.
- Data is automatically protected during power
loss.
- Replaces 128k x 8 volatile static RAM,
EEPROM or Flash memory.
- Unlimited write cycles.
- Low-power CMOS.
- Read and write access times of 70 ns.
- Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time.
- Full ±10% VCC operating range (DS1245Y).
- Optional ±5% VCC operating range
(DS1245A.
DS1245AB Datasheet
