DS1245AB Description
Each plete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the...
DS1245AB Key Features
- 10 years minimum data retention in the
- Data is automatically protected during power
- Replaces 128k x 8 volatile static RAM
- Unlimited write cycles
- Low-power CMOS
- Read and write access times of 70 ns
- Lithium energy source is electrically
- Full ±10% VCC operating range (DS1245Y)
- Optional ±5% VCC operating range
- 40°C to +85°C, designated IND