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DS1345Y Datasheet 1024k Nonvolatile SRAM

Manufacturer: Maxim Integrated (now Analog Devices)

Download the DS1345Y datasheet PDF. This datasheet also includes the DS1345AB variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DS1345AB_MaximIntegratedProducts.pdf) that lists specifications for multiple related part numbers.

General Description

A0 – A16 - Address Inputs DQ0 – DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable RST - Reset Output BW - Battery Warning Output VCC GND - Power (+5V) - Ground NC - No Connect DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits.

Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.

When such a condition occurs, the lithium energy source is automatically switched on and write

Overview

19-5589; Rev 10/10 www.maxim-ic.com.

Key Features

  • 10 years minimum data retention in the absence of external power.
  • Data is automatically protected during power loss.
  • Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp-up.
  • Battery monitor checks remaining capacity daily.
  • Read and write access times of 70ns.
  • Unlimited write cycle endurance.
  • Typical standby current 50µA.
  • Upgrade for 128k x 8 SRAM, EEPROM or Flash.
  • Lithium battery is electricall.

📁 Similar Datasheet

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