DS2777 Key Features
- High-Side nFET Drivers and Protection Circuitry
- Precision Voltage, Temperature, and Current Measurement System
- Cell-Capacity Estimation from Coulomb Count, Discharge Rate, Temperature, and Cell Characteristics
- Estimates Cell Aging Between Learn Cycles
- Uses Low-Cost Sense Resistor
- Allows Calibration of Gain and Temperature Coefficient
- Programmable Thresholds for Overvoltage and Overcurrent
- Pack Authentication Using SHA-1 Algorithm (DS2776/DS2778)
- 32-Byte Parameter EEPROM
- 16-Byte User EEPROM