Download the MAX11015 datasheet PDF.
This datasheet also covers the MAX11014 variant, as both devices belong to the same automatic rf mesfet amplifier drain-current controllers family and are provided as variant models within a single manufacturer datasheet.
General Description
The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations.
Key Features
Dual Drain-Current-Sense Gain Amplifier Preset Gain of 4 ±0.5% Accuracy for Sense Voltages Between 75mV and 625mV (MAX11014).
Common-Mode Sense-Resistor Voltage Range 0.5V to 11V (MAX11014) 5V to 32V (MAX11015).
Low-Noise Output GATE Bias with ±10mA GATE Drive.
Fast Clamp and Power-On Reset.
12-Bit DAC Controls MESFET GATE Voltage.
Internal Temperature Sensor/Dual Remote Diode Temperature Sensors.
Note: The manufacturer provides a single datasheet file (MAX11014_MaximIntegratedProducts.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for MAX11015 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MAX11015. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com XX-XXXX; Rev 0; 10/05 Automatic RF MESFET Amplifier Drain-Current Controllers General Description The MAX11014/MAX11015 set and control bias condition...
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neral Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation while the MAX11015 targets Class AB operation. Both devices integrate SRAM lookup tables (LUTs) that can be used to store temperature and drain-current compensation data. Each device includes dual high-side current-sense amplifiers to monitor the MESFET drain currents through the voltage drop across the sense resistors in the range
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MAX11015 Datasheet
