MEM2309 mosfet equivalent, p-channel mosfet.
and low power dissipation.
Featureÿ
l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4.5V,ID=-4A High De.
MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low po.
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