Full PDF Text Transcription for 2N6660 (Reference)
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2N6660. For precise diagrams, and layout, please refer to the original PDF.
2N6660 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast swi...
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power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input impedance and high gain Applications • Motor controls • Converters • Amplifiers • Switches • Power supply circuits • Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc. Description 2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process.
2N6660 Datasheet
