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85C82 - 2K 5.0V CMOS Serial EEPROM

Download the 85C82 datasheet PDF. This datasheet also covers the 85C72 variant, as both devices belong to the same 2k 5.0v cmos serial eeprom family and are provided as variant models within a single manufacturer datasheet.

General Description

The Microchip Technology Inc.

85C72/82/92 is a 1K/ 2K/4K bit Electrically Erasable PROM.

The device is organized as shown with a two wire serial interface.

Key Features

  • Low power CMOS technology.
  • Two wire serial interface bus, I2C™ compatible.
  • 5 volt only operation.
  • Self-timed write cycle (including auto-erase).
  • Page-write buffer.
  • 1ms write cycle time for single byte.
  • 1,000,000 ERASE/WRITE cycles guaranteed.
  • Data retention >200 years.
  • 8-pin DIP or SOIC package.
  • Available for extended temperature ranges: - Commercial: 0˚C to +70˚C - Industrial: -40˚C to +85˚C - Automotive:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (85C72-Microchip.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for 85C82 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 85C82. For precise diagrams, and layout, please refer to the original PDF.

85C72/82/92 1K/2K/4K 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology • Two wire serial interface bus, I2C™ compatible • 5 volt only operation • Self-timed wr...

View more extracted text
interface bus, I2C™ compatible • 5 volt only operation • Self-timed write cycle (including auto-erase) • Page-write buffer • 1ms write cycle time for single byte • 1,000,000 ERASE/WRITE cycles guaranteed • Data retention >200 years • 8-pin DIP or SOIC package • Available for extended temperature ranges: - Commercial: 0˚C to +70˚C - Industrial: -40˚C to +85˚C - Automotive: -40˚C to +125˚C Organization Page Write Buffer 85C72 128 x 8 2 Bytes 85C82 256 x 8 2 Bytes 85C92 2 x 256 x 8 8 Bytes DESCRIPTION The Microchip Technology Inc. 85C72/82/92 is a 1K/ 2K/4K bit Electrically Erasable PROM. The device is organized as shown with