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AT27C512R - 512-Kbit PROM

General Description

4 3.

Description 5 4.

Electrical Characteristics6 5.

Key Features

  • Fast Read Access Time: 45 ns.
  • Low-Power CMOS Operation:.
  • 100 μA maximum standby.
  • 20 mA maximum active at 5 MHz.
  • 5V ± 10% Supply.
  • High Reliability CMOS Technology:.
  • 2,000V ESD protection.
  • 200 mA latch-up immunity.
  • Rapid Programming Algorithm.
  • 100 μs/byte (typical).
  • CMOS and TTL Compatible Inputs and Outputs.
  • Integrated Product Identification Code.
  • Industrial Temperature Range: -40.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AT27C512R 512-Kbit (64K x 8) One-Time Programmable, Read‑Only Memory Features • Fast Read Access Time: 45 ns • Low-Power CMOS Operation: – 100 μA maximum standby – 20 mA maximum active at 5 MHz • 5V ± 10% Supply • High Reliability CMOS Technology: – 2,000V ESD protection – 200 mA latch-up immunity • Rapid Programming Algorithm – 100 μs/byte (typical) • CMOS and TTL Compatible Inputs and Outputs • Integrated Product Identification Code • Industrial Temperature Range: -40°C to +85°C • Green Package Options (Lead-free/Halide-free/RoHS compliant) Packages • 32-Lead PLCC and 28-Lead PDIP © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS20006752A-page 1 AT27C512R Table of Contents Features......................................................................................