Microchip Technology AT28HC256
High-Speed Paged Parallel EEPROM
FEATURES
● Fast Read Access Time: 70 ns● Automatic Page Write Operation: – Internal address and data latches for 64 bytes – Internal control timer
● Fast Write Cycle Time: – Page Write cycle time: 3 ms or 10 ms maximum – 1 to 64-byte Page Write operation
● Low-Power Dissipation: – 80 mA active current – 3 mA standby current
● Hardware and Software Data Protection
● DATA Polling for End of Write Detection
● High Reliability CMOS Technology: – Endurance: 10,000 or 100,000 cycles – Data retention: 10 years
● Single 5V ± 10% Supply
● CMOS and TTL Compatible Inputs and Outputs
● JEDEC® Approved Byte-Wide Pinout
● Industrial Temperature Range
● Green (RoHS-compliant) Packaging Option Only Packages
● 32-Lead PLCC and 28-Lead SOIC Data Sheet © 2020-2023 Microchip Technology Inc. and its subsidiaries DS20006428B - 1 AT28HC256 Table of Contents
FEATURES
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