DN2625 Description
The DN2625 is a low-threshold Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS...
DN2625 Key Features
- Very Low Gate Threshold Voltage
- Designed to be Source-driven
- Low Switching Losses
- Low Effective Output Capacitance
- Designed for Inductive Loads