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JANSR2N7593U3 - 250V N-Channel MOSFET

Key Features

  • The following are key features of the MRH25N12U3SR/JANSR2N7593U3 device:.
  • Low RDS(on).
  • Fast switching.
  • Single-event hardened.
  • Low gate charge.
  • Simple drive.
  • Ease of paralleling.
  • Hermetically sealed.
  • Surface-mount design.
  • Ceramic package.
  • ESD rating: Class 3B MIL-STD-750, TM 1020.

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Other Datasheets by Microchip Technology

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JANSR2N7587U3 Preliminary 100V N-Channel Radiation-Hardened MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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250V N-Channel Radiation-Hardened MOSFET MRH25N12U3SR/JANSR2N7593U3 Product Overview Microchip’s new M6TM technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic power MOSFETs targeted for space and military applications. Microchip rad-hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for total dose and single-event environments. M6 will perform in extreme-environment applications and will remain within specification in radiation evironments up to 100 krad total ionizing dose (TID). Figure 1.