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  Microchip Technology Semiconductor Electronic Components Datasheet  

LND01 Datasheet

Lateral N-Channel Depletion-Mode MOSFET

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LND01
Lateral N-Channel Depletion-Mode MOSFET
Features
• Bi-directional
• Low On-resistance
• Low Input Capacitance
• Fast Switching Speeds
• High Input Impedance and High Gain
• Low Power Drive Requirement
• Ease of Paralleling
Applications
• Normally-on Switches
• Solid-state Relays
• Converters
• Constant Current Sources
• Analog Switches
General Description
The LND01 is a low-threshold, Depletion-mode
(normally-on) transistor that uses an advanced lateral
DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors as well as the high input impedance and
positive temperature coefficient inherent in
MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally
induced secondary breakdown.
The body of the transistor is connected to the gate pin.
The channel is therefore being pinched off by both the
gate and body. The gate pin has a diode connected to
the drain terminal and another diode connected to the
source terminal.
Package Type
See Table 2-1 for pin information.
5-lead SOT-23
SOURCE
DRAIN
N/C
GATE
N/C
2017 Microchip Technology Inc.
DS20005696A-page 1


  Microchip Technology Semiconductor Electronic Components Datasheet  

LND01 Datasheet

Lateral N-Channel Depletion-Mode MOSFET

No Preview Available !

LND01
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-source Voltage ....................................................................................................................................... BVDSX
Source-to-drain Voltage........................................................................................................................................ BVSDX
Gate-to-source Voltage ............................................................................................................................ –12V to +0.6V
Gate-to-drain Voltage ............................................................................................................................... –12V to +0.6V
Operating Ambient Temperature, TA ................................................................................................... –25°C to +125°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. (Note 1)
Parameter
Sym. Min. Typ. Max. Unit
Conditions
Drain-to-source Breakdown Voltage
Source-to-drain Breakdown Voltage
Gate-to-source Off Voltage
Source-to-gate Off Voltage
Gate-to-source Diode
Gate-to-drain Diode
Drain-to-source Leakage Current
Source-to-drain Leakage Current
Saturated Drain-to-source Current
Saturated Source-to-drain Current
Static Drain-to-source On-state
Resistance
BVDSX
BVSDX
VGS(OFF)
VSG(OFF)
VGS
VGD
IDS(OFF)
ISD(OFF)
IDSS
ISDD
RDS(ON)
9
9
–0.8
–0.8
–12
–12
300
300
0.9
–3
–3
0.6
0.6
1
1
1.4
V VGS = –3V, IDS = 10 µA
V VGD = –3V, ISD = 10 µA
V VDS = 9V, IDS = 1 µA
V VSD = 9V, ISD = 1 µA
V IGS = ±1 µA
V IGD = ±1 µA
µA VGS = –3V, VDS = 9V
µA VGD = –3V, VSD = 9V
mA VGS = 0V, VDS = 9V
mA VGD = 0V, VSD = 9V
VGS = 0V, IDS = 100 mA
Static Source-to-drain On-state
Resistance
RSD(ON) — 0.9 1.4
VGD = 0V, ISD = 100 mA
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.
(Pulse test: 300 µs pulse, 2% duty cycle)
2: Specification is obtained by characterization and is not 100% tested.
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. (Note 2)
Parameter
Sym. Min. Typ. Max. Unit
Conditions
Forward Transconductance
GFS 200 — — mmho VDS = 9V, IDS = 50 mA
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
— 46 —
— 32 —
— 23 —
pF
pF
VGS = –3V, VDS = 5V,
f = 1 MHz
pF
Turn-on Delay Time
td(ON)
— 3.8 —
ns
Rise Time
Turn-off Delay Time
tr — 11 —
td(OFF)
1
ns VDD = 9V, IDS = 100 mA,
ns RGEN = 25
Fall Time
tf
— 6.4 —
ns
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.
(Pulse test: 300 µs pulse, 2% duty cycle)
2: Specification is obtained by characterization and is not 100% tested.
DS20005696A-page 2
2017 Microchip Technology Inc.


Part Number LND01
Description Lateral N-Channel Depletion-Mode MOSFET
Maker Microchip
Total Page 12 Pages
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