MSC030SDA330B Overview
Zero Recovery Silicon Carbide Schottky Diode The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC030SDA330B device is a 3300 V, 30 A SiC SBD in a two-lead TO-247 package. Features The following are key features of the MSC030SDA330B device: • No reverse recovery • Low forward voltage • Low leakage current • RoHS pliant The following are benefits of the MSC030SDA330B device: • High switching frequency • Low switching losses • Low noise (EMI) switching • Higher reliability systems • Increased system power density The MSC030SDA330B device is designed for the following applications:
MSC030SDA330B Key Features
- No reverse recovery
- Low forward voltage
- Low leakage current
- RoHS pliant
- High switching frequency
- Low switching losses
- Low noise (EMI) switching
- Higher reliability systems
- Increased system power density