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MSCSM120AM042T6AG - SiC MOSFET

Key Features

  • The following are the key features of the MSCSM120AM042T6AG device:.
  • SiC Power MOSFET.
  • Low RDS(on).
  • High temperature performance.
  • Kelvin source for easy drive.
  • Low stray inductance.
  • M5 power connectors.
  • Internal thermistor for temperature monitoring.
  • Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM120AM042T6AG device:.
  • High efficiency converter.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSCSM120AM042T6AG Phase Leg SiC MOSFET Power Module : : Product Overview The MSCSM120AM042T6AG device is a full bridge 1200V, 495A phase leg silicon carbide (SiC) MOSFET power module. Note:  All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology Inc.