Datasheet4U Logo Datasheet4U.com

MSCSM120HM50T3AG - SiC MOSFET

Key Features

  • The following are key features of the MSCSM120HM50T3AG device:.
  • SiC Power MOSFET.
  • Low RDS(on).
  • High temperature performance.
  • Kelvin source for easy drive.
  • Very low stray inductance.
  • Internal thermistor for temperature monitoring.
  • Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM120HM50T3AG device:.
  • High power and efficiency converters and inverters.
  • Ou.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MSCSM120AM027CT6AG Phase Leg SiC Microsemi
MSCSM120AM03CT6LIAG Very Low Stray Inductance Phase Leg SiC MOSFET Microsemi
MSCSM120AM08CT3G Phase Leg SiC MOSFET Microsemi
MSCSM120AM50CT1AG Phase Leg SiC MOSFET Microsemi
MSCSM120TAM11CTPAG Triple Phase Leg SiC MOSFET Microsemi

Other Datasheets by Microchip Technology

Part Number Description
MSCSM120HM16T3AG Full Bridge SiC MOSFET Power Module
MSCSM120HRM052NG T-Type SiC MOSFET Power Module
MSCSM120HRM08NG T-Type SiC MOSFET Power Module
MSCSM120HRM163AG T-Type SiC MOSFET
MSCSM120HRM311AG T-Type SiC MOSFET Power Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSCSM120HM50T3AG Full Bridge SiC MOSFET Power Module Product Overview The MSCSM120HM50T3AG device is a full bridge 1200V, 55A silicon carbide (SiC) power module. : Notes:  • All multiple inputs and outputs must be shorted together. For example, 13/14, 29/30, 22/23, and so on. • All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology Inc.