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MSCSM70AM19T1AG - SiC MOSFET

Key Features

  • The following are key features of the MSCSM70AM19T1AG device:.
  • SiC Power MOSFET.
  • High speed switching.
  • Low RDS(on).
  • Ultra low loss.
  • Kelvin source for easy drive.
  • Very low stray inductance.
  • Internal thermistor for temperature monitoring.
  • Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM70AM19T1AG device:.
  • High efficiency converter.
  • Outstanding.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSCSM70AM19T1AG Phase Leg SiC MOSFET Power Module Product Overview The MSCSM70AM19T1AG device is a full bridge 700V, 124A silicon carbide (SiC) power module. Notes:  • Pins 1/2; 4/5; 7/8 must be shorted together. • All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology Inc.