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TN2124 - N-Channel Vertical DMOS FET

General Description

The TN2124 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process.

Key Features

  • Free from Secondary Breakdown.
  • Low Power Drive Requirement.
  • Ease of Paralleling.
  • Low CISS and Fast Switching Speeds.
  • Excellent Thermal Stability.
  • Integral Source-Drain Diode.
  • High Input Impedance and High Gain.

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TN2124 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TN2124 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process.