Microchip Technology TP5335
The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. The characteristic of all MOS structures is that this device is free from thermal runaway and thermally induced secondary breakdown.| Part No. | TP5335 |
|---|---|
| Datasheet | TP5335 Download |
| Manufacturer |  Microchip Technology |
| Description | P-Channel DMOS FET |
| Buy | Stock & Price |
FEATURES
● High Input Impedance and High Gain● Low-Power Drive Requirement
● Ease of Paralleling
● Low CISS and Fast Switching Speeds
● Excellent Thermal Stability
● Integral Source-Drain Diode
● Free from Secondary Breakdown
APPLICATIONS
● Logic-Level Interfaces (Ideal for TTL and CMOS)● Solid-State Relays
● Analog Switches
● Power Management
● Telecommunication Switches
GENERAL DESCRIPTION
Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Type 3-lead SOT-23 (Top view) 6-lead DFN (Top view) DRAIN SOURCE GATE GATE 1 NC 2 SOURCE 3 EP 6 NC DRAIN 5 NC 4 NC See Table 2-1 for pin information. 2018-2023 Microchip Technology Inc. and its subsidiaries DS20005704E-page 1 TP5335 1.0ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
(†) Drain-to-Source Voltage .......................................................................................................................................
