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VN2210 - N-Channel Vertical DMOS FET

General Description

VN2210 is an Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process.

Key Features

  • Free from Secondary Breakdown.
  • Low Power Drive Requirement.
  • Ease of Paralleling.
  • Low CISS and Fast Switching Speeds.
  • Excellent Thermal Stability.
  • Integral Source-drain Diode.
  • High Input Impedance and High Gain.

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VN2210 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-drain Diode • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.) General Description VN2210 is an Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process.