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Micron

EDF8132A1MC Datasheet Preview

EDF8132A1MC Datasheet

Mobile LPDDR3 SDRAM

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178-Ball, Single-Channel Mobile LPDDR3 SDRAM
Features
Mobile LPDDR3 SDRAM
EDF8132A1MC, EDFA232A1MA
Features
• Ultra-low-voltage core and I/O power supplies
• Frequency range
– 800 MHz (data rate: 1600 Mb/s/pin)
• 8n prefetch DDR architecture
• 8 internal banks for concurrent operation
• Multiplexed, double data rate, command/address
inputs; commands entered on each CK_t/CK_c
edge
• Bidirectional/differential data strobe per byte of
data (DQS_t/DQS_c)
• Programmable READ and WRITE latencies (RL/WL)
• Burst length: 8
• Per-bank refresh for concurrent operation
• Auto temperature-compensated self refresh
(ATCSR) by built-in temperature sensor
• Partial-array self refresh (PASR)
• Deep power-down mode (DPD)
• Selectable output drive strength (DS)
• Clock-stop capability
• On-die termination (ODT)
• Lead-free (RoHS-compliant) and halogen-free
packaging
Options
• VDD1/VDD2/VDDCA/VDDQ: 1.8V/1.2V/1.2V/1.2V
• Array configuration
– 256 Meg x 32 (DDP)
– 512 Meg x 32 (QDP)
• Packaging
– 12.0mm x 11.5mm, 178-ball FBGA package
– 13.0mm x 11.5mm, 178-ball FBGA package
• Operating temperature range
– From –30°C to +85°C
Table 1: Configuration Addressing – Single-Channel Package
Architecture
Density per package
Die per package
Ranks (CS_n) per channel
Die per rank
Configuration per rank (CS_n)
Row addressing
Column
addressing/CS_n
CS0_n
CS1_n
CS0_n
CS1_n
CS0_n
CS1_n
256 Meg x 32
8Gb
2
2
1
1
16 Meg x 32 x 8 banks
16 Meg x 32 x 8 banks
16K A[13:0]
1K A[9:0]
1K A[9:0]
512 Meg x 32
16Gb
4
2
2
2
32 Meg x 16 x 8 banks x 2
32 Meg x 16 x 8 banks x 2
16K A[13:0]
2K A[10:0]
2K A[10:0]
PDF: 09005aef858e9dd3
178b_8-16gb_2c0f_mobile_lpddr3.pdf – Rev. D 9/14 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




Micron

EDF8132A1MC Datasheet Preview

EDF8132A1MC Datasheet

Mobile LPDDR3 SDRAM

No Preview Available !

178-Ball, Single-Channel Mobile LPDDR3 SDRAM
Features
Table 2: Key Timing Parameters
Speed
Grade
GD
Clock Rate
(MHz)
800
Data Rate
(Mb/s/pin)
1600
WRITE Latency
(Set A)
6
READ
Latency
12
Table 3: Part Number Description
Part
Number
EDF8132A1MC-GD-F-D
EDF8132A1MC-GD-F-R
EDFA232A1MA-GD-F-D
EDFA232A1MA-GD-F-R
Total
Density
8Gb
Configuration
256 Meg x 32
16Gb
512 Meg x 32
Ranks
2
2
Channels
1
1
Package
Size
12.0mm x 11.5mm
(0.9mm MAX height)
13.0mm x 11.5mm
(1.1mm MAX height)
Ball
Pitch
0.80mm
0.65mm
0.80mm
0.65mm
Figure 1: Marketing Part Number Chart
E D F 81 32 A 1 MC- GD - F - D
Micron Technology
(Micron Japan)
Type
D = Packaged device
Product Family
F = Mobile LPDDR3 SDRAM
Density/Chip Select
81 = 8Gb/2-CS
A2 = 16Gb/2-CS
Organization
32 = x32
Power Supply Interface
A = VDD1 = 1.8V, VDD2 = VDDCA = VDDQ = 1.2V,
S8 device, HSUL_12
Packing Media
D = Dry Pack (Tray)
R = Tape and Reel
Environment Code
F = Lead-free (RoHS-compliant)
and halogen-free
Speed
GD = 1600 Mbps
Package
MC = Stacked FBGA
MA = Stacked FBGA
Revision
Note: 1. The characters highlighted in gray indicate the physical part marking found on the device.
PDF: 09005aef858e9dd3
178b_8-16gb_2c0f_mobile_lpddr3.pdf – Rev. D 9/14 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.


Part Number EDF8132A1MC
Description Mobile LPDDR3 SDRAM
Maker Micron
Total Page 30 Pages
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