EDJ4216EFBG-L
Description
The 1.35V DDR3L-RS SDRAM device is a low-voltage version of the DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V-compatible mode.
Key Features
- VDD = VDDQ = 1.35V (1.283–1.45V)
- Backward compatible to VDD = VDDQ = 1.5V ±0.075V – Supports DDR3L devices to be backward compatible in 1.5V applications
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS (READ) latency (CL)
- Programmable posted CAS additive latency (AL)
- Programmable CAS (WRITE) latency (CWL)
