EDJ4216EFBG-L Datasheet | Micron Technology

4Gb: x8, x16 DDR3L-RS SDRAM Description DDR3L-RS SDRAM EDJ4208EFBG-L - 64 Meg x 8 x 8 banks EDJ4216EFBG-L - 32 Meg x 16 x 8 banks Description The 1.35V DDR3L-RS SDRAM device is a low-voltage version of the DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V-patible mode. Features - VDD = VDDQ = 1.35V (1.283- 1.45V) - Backward patible to VDD = VDDQ = 1.5V ±0.075V - Supports DDR3L devices to be backward patible in 1.5V applications - Differential bidirectional data strobe - 8n-bit prefetch architecture - Differential clock inputs (CK, CK#) - 8 internal banks - Nominal and dynamic on-die termination (ODT) for data, strobe, and mask...