M29W512GH70N3E
Overview
- Stacked device (two 256Mb die)
- Supply voltage - VCC = 2.7-3.6V (program, erase, read) - VCCQ = 1.65-3.6V (I/O buffers) - VPPH = 12V for fast program (optional)
- Asynchronous random/page read - Page size: 8 words or 16 bytes - Page access: 25ns, 30ns - Random access: 80ns, 90ns
- Commands sensitive to MSB A24 (die selection)
- Fast program commands: 32-word (64-byte) write buffer
- Enhanced buffered program commands: 256-word
- Program time - 16µs per byte/word TYP - Single die program time: 10s with VPPH, 16s with- out VPPH
- Memory organization - Uniform blocks: 512 main blocks (2 x 256), 128KB or 64KW each
- Program/erase controller - Embedded byte/word program algorithms
- Program/erase suspend and resume capability - Read from any block during a PROGRAM SUSPEND operation - Read or program another block durin
