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M29W512GH70N3E Datasheet Preview

M29W512GH70N3E Datasheet

Parallel NOR Flash Embedded Memory

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512Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
M29W512GH70N3E, M29W512GH7AN6E
Features
• Stacked device (two 256Mb die)
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VCCQ = 1.65–3.6V (I/O buffers)
– VPPH = 12V for fast program (optional)
• Asynchronous random/page read
– Page size: 8 words or 16 bytes
– Page access: 25ns, 30ns
– Random access: 80ns, 90ns
• Commands sensitive to MSB A24 (die selection)
• Fast program commands: 32-word (64-byte) write
buffer
• Enhanced buffered program commands: 256-word
• Program time
– 16µs per byte/word TYP
– Single die program time: 10s with VPPH, 16s with-
out VPPH
• Memory organization
– Uniform blocks: 512 main blocks (2 x 256),
128KB or 64KW each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– Read from any block during a PROGRAM
SUSPEND operation
– Read or program another block during an ERASE
SUSPEND operation
• Unlock bypass, block erase, die erase, write to buffer
and program
– Fast buffered/batch programming
– Fast block/die erase
• VPP/WP# pin protection
– Protects first and last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
• Two extended memory blocks
– 2 x 256 bytes (2 x 128 words) memory block for
permanent, secure identification
– Programmed or locked at the factory or by the
customer
• Common flash interface
– 64-bit security code
• Low power consumption: Standby and automatic
modes
• JESD47H-compliant
– 100,000 minimum PROGRAM/ERASE cycles per
block
– Data retention: 20 years (TYP)
• 65nm single-level cell (SLC) process technology
• TSOP package
• Green packages available
– RoHS-compliant
– Halogen-free
• Automotive device temperature (automotive grade
certified):
–40°C to +125°C (automotive grade 3)
–40°C to +85°C (automotive grade 6)
PDF: 09005aef85007385
m29w_512mb.pdf - Rev. E 9/15 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




Micron

M29W512GH70N3E Datasheet Preview

M29W512GH70N3E Datasheet

Parallel NOR Flash Embedded Memory

No Preview Available !

512Mb: 3V Embedded Parallel NOR Flash
Features
Part Numbering Information
This device is available with extended memory block prelocked by Micron. Devices are shipped from the factory
with memory content bits erased to 1. For available options, such as packages, or for further information, contact
your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification
comparison by device type is available at www.micron.com/products. Contact the factory for devices not found.
Table 1: Part Number Information
Part Number
Category
Device Type
Operating Voltage
Device function
Speed
Package
Temperature Range
Shipping Options
Category Details
M29W
W = VCC = 2.7 to 3.6V
512GH = 512Mb (x8/x16) page, uniform block Flash memory, outermost blocks protected
by VPP/WP#
7A = 80ns
70 = 80ns
N = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant
3 = –40°C to +125°C
6 = –40°C to +85°C
E = RoHS-compliant package, standard packing
F = RoHS-compliant package, tape and reel packing
Notes
1, 2
1
Notes:
1. 90ns if VCCQ = 1.65V to VCC.
2. Automotive qualified, available only with option 6. Qualified and characterized according to AEC Q100 and
Q003 or equivalent; advanced screening according to AEC Q001 and Q002 or equivalent.
PDF: 09005aef85007385
m29w_512mb.pdf - Rev. E 9/15 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.


Part Number M29W512GH70N3E
Description Parallel NOR Flash Embedded Memory
Maker Micron
Total Page 30 Pages
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