M29W512GH70N3E
M29W512GH70N3E is Parallel NOR Flash Embedded Memory manufactured by Micron Technology.
Features
Parallel NOR Flash Embedded Memory
M29W512GH70N3E, M29W512GH7AN6E
Features
- Stacked device (two 256Mb die)
- Supply voltage
- VCC = 2.7- 3.6V (program, erase, read)
- VCCQ = 1.65- 3.6V (I/O buffers)
- VPPH = 12V for fast program (optional)
- Asynchronous random/page read
- Page size: 8 words or 16 bytes
- Page access: 25ns, 30ns
- Random access: 80ns, 90ns
- mands sensitive to MSB A24 (die selection)
- Fast program mands: 32-word (64-byte) write buffer
- Enhanced buffered program mands: 256-word
- Program time
- 16µs per byte/word TYP
- Single die program time: 10s with VPPH, 16s with- out VPPH
- Memory organization
- Uniform blocks: 512 main blocks (2 x 256), 128KB or 64KW each
- Program/erase controller
- Embedded byte/word program algorithms
- Program/erase suspend and resume capability
- Read from any block during a PROGRAM SUSPEND operation
- Read or program another block...
