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Micron

M58BW32F Datasheet Preview

M58BW32F Datasheet

32Mb 3.3V Supply Flash Memory

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M58BW16F, M58BW32F
Features
M58BW16F, M58BW32F
16Mb or 32Mb (x32, Boot Block, Burst) 3.3V Supply Flash Memory
Features
• Supply voltage
– VDD = 2.7–3.6V (45ns) or VDD = 2.5–3.3V (55ns)
– VDDQ = VDDQIN = 2.4V to VDD for I/O buffers
• High performance
– Access times: 45ns and 55ns
– Synchronous burst reads
– 75 MHz effective zero wait-state burst read
– Asynchronous page reads (4 double words)
• M58BW32F memory organization:
– Eight 64 Kbit small parameter blocks
– Four 128 Kbit large parameter blocks
– Sixty-two 512 Kbit main blocks
• M58BW16F memory organization:
– Eight 64 Kbit parameter blocks
– Thirty-one 512 Kbit main blocks
• Hardware block protection
– WP# pin to protect any block combination from
PROGRAM and ERASE operations
– PEN signal for program/erase enable
• Irreversible modify protection (OTP like) on
128 Kbits:
– Block 1 (bottom device) or block 72 (top device)
in the M58BW32F
– Blocks 2 and 3 (bottom device) or blocks 36 and
35 (top device) in the M58BW16F
• Security
– 64-bit unique device identifier (UID)
• Fast programming
– Write to buffer and program capability (8 double
words)
• Optimized for FDI drivers
– Common flash interface (CFI)
– Fast Program/Erase Suspend feature in each
block
• Low power consumption
– 100µA typical Standby current
• Electronic signature
• Manufacturer code: 0020h
– Top device codes: M58BW32FT: 8838h
M58BW16FT: 883Ah
– Bottom device codes: M58BW32FB: 8837h
M58BW16FB: 8839h
• Automotive device grade 3:
– Temperature: –40 to 125 °C
• Automotive grade certified
PDF: 09005aef8457ee46
m58bw_16-32f.pdf - Rev. C 5/16 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




Micron

M58BW32F Datasheet Preview

M58BW32F Datasheet

32Mb 3.3V Supply Flash Memory

No Preview Available !

M58BW16F, M58BW32F
Features
Part Numbering Information
Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack-
ages or speed, or for further information, contact your Micron sales representative. Part numbers can be verified at
www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products.
Contact the factory for devices not found.
Table 1: Part Number Information Scheme
Part Number
Category
Category Details
Device type
M58 = Parallel Flash memory
Architecture
B = Burst mode
Operating voltage
W = [2.7V to 3.6V] VDD range for 45ns speed class
2.5V to 3.3V] VDD range for 55ns speed class
[2.4V to VDD] VDDQ range for 45ns and 55ns speed classes
Device function/density 32F = 32 Mbit (x32), boot block, burst, 0.11µm technology
16F = 16 Mbit (x32), boot block, burst, 0.11µm technology
Array matrix
T = Top boot
B = Bottom boot
Speed
4 = 45ns
5 = 55ns
Package
T = PQFP80
ZA = LBGA80, 1.0mm pitch
Temperature range
3 = Automotive grade certified1 , –40 to 125 °C
Packing Option
Blank = Standard packing
T = Tape and reel packing
F = ECOPACK® package, tape and reel 24mm packing
Note: 1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening according to
AEC Q001 & Q002 or equivalent.
PDF: 09005aef8457ee46
m58bw_16-32f.pdf - Rev. C 5/16 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.


Part Number M58BW32F
Description 32Mb 3.3V Supply Flash Memory
Maker Micron
Total Page 30 Pages
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