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MT16HTF25664A Datasheet Preview

MT16HTF25664A Datasheet

2GB DDR2 SDRAM Unbuffered DIMM

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512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
Features
DDR2 SDRAM Unbuffered DIMM
MT16HTF6464A – 512MB
MT16HTF12864A – 1GB
MT16HTF25664A – 2GB
For component specifications, refer to the Micron’s Web site: www.micron.com/ddr2
Features
• 240-pin, unbuffered, dual in-line memory module
(UDIMM)
• Fast data transfer rates: PC2-3200, PC2-4200, PC2-
5300, or PC2-6400
• 512MB (64 Meg x 64), 1GB (128 Meg x 64), and 2GB
(256 Meg x 64)
• VDD = VDDQ = +1.8V
• VDDSPD = +1.7V to +3.6V
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• Four-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Figure 1: 240-Pin DIMM (MO-237 R/C “B”)
PCB height: 29.97mm (1.18in)
Options
• Package
240-pin DIMM (lead-free)
• Frequency/CL1
2.5ns @ CL = 5 (DDR2-800)2
3.0ns @ CL = 5 (DDR2-667)3
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
• PCB height
29.97mm (1.18in)
Marking
Y
-80E
-667
-53E
-40E
Notes: 1. CL = CAS (READ) latency.
2. Not available in 512MB density.
3. Not available in 2GB density.
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




Micron

MT16HTF25664A Datasheet Preview

MT16HTF25664A Datasheet

2GB DDR2 SDRAM Unbuffered DIMM

No Preview Available !

512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
Features
Table 1: Address Table
Refresh count
Row addressing
Device bank addressing
Device page size per bank
Device configuration
Column addressing
Module rank addressing
512MB
8K
8K (A0–A12)
4 (BA0, BA1)
1KB
256Mb (32 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
1GB
8K
16K (A0–A13)
4 (BA0, BA1)
1KB
512Mb (64 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
2GB
8K
16K (A0–A13)
8 (BA0, BA1, BA2)
1KB
1Gb (128 Meg x 8)
1K (A0–A9)
2 (S0#, S1#)
Table 2: Key Timing Parameters
Speed Grade
-80E
-667
-53E
-40E
CL = 3
400
400
400
Data Rate (MT/s)
CL = 4
533
533
533
400
CL = 5
800
667
tRCD
(ns)
12.5
15
15
15
tRP
(ns)
12.5
15
15
15
tRC
(ns)
55
55
55
55
Table 3: Part Numbers and Timing Parameters
Part Number1
MT16HTF6464AY-667__
MT16HTF6464AY-53E__
MT16HTF6464AY-40E__
MT16HTF12864AY-80E__
MT16HTF12864AY-667__
MT16HTF12864AY-53E__
MT16HTF12864AY-40E__
MT16HTF25664AY-80E__
MT16HTF25664AY-667__
MT16HTF25664AY-53E__
MT16HTF25664AY-40E__
Module
Density
512MB
512MB
512MB
1GB
1GB
1GB
1GB
2GB
2GB
2GB
2GB
Configuration
64 Meg x 64
64 Meg x 64
64 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
Module
Bandwidth
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Memory Clock/
Data Rate
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
3.75ns/533 MT/s
5.0ns/400 MT/s
Latency
(CL-tRCD-tRP)
5-5-5
4-4-4
3-3-3
5-5-5
5-5-5
4-4-4
3-3-3
5-5-5
5-5-5
4-4-4
3-3-3
Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT16HTF12864AY-80ED4.
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.


Part Number MT16HTF25664A
Description 2GB DDR2 SDRAM Unbuffered DIMM
Maker Micron
Total Page 21 Pages
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