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MT16KTF51264HZ Datasheet Preview

MT16KTF51264HZ Datasheet

4GB 1.35V DDR3L SDRAM SODIMM

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4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM
Features
1.35V DDR3L SDRAM SODIMM
MT16KTF51264HZ – 4GB
MT16KTF1G64HZ – 8GB
Features
• DDR3L functionality and operations supported as
defined in the component data sheet
• 204-pin, small outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC3-14900, PC3-12800, or
PC3-10600
• 4GB (512 Meg x 64), 8GB (1 Gig x 64)
• VDD = 1.35V (1.283V–1.45V)
• VDD = 1.5V (1.425–1.575V)
• Backward compatible to VDD = 1.5V ±0.075V
• VDDSPD = 3.0–3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Dual rank
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• On-board I2C serial presence-detect (SPD) EEPROM
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Figure 1: 204-Pin SODIMM (MO-268 R/C-F,
R/C-F3)
Module height: 30mm (1.181in)
Options
• Operating temperature
– Commercial (0°C TA +70°C)
• Package
– 204-pin DIMM (halogen-free)
• Frequency/CAS latency
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
Marking
None
Z
-1G9
-1G6
-1G4
Table 1: Key Timing Parameters
Speed Industry
Grade Nomenclature
-1G9
PC3-14900
-1G6
PC3-12800
-1G4
PC3-10600
-1G1
PC3-8500
-1G0
PC3-8500
-80B
PC3-6400
CL =
13
1866
CL =
11
1600
1600
Data Rate (MT/s)
CL =
10 CL = 9 CL = 8 CL = 7
1333 1333 1066 1066
1333 1333 1066 1066
1333 1333 1066 1066
– – 1066 1066
– – 1066 –
––––
CL = 6
800
800
800
800
800
800
CL = 5
667
667
667
667
667
667
tRCD
(ns)
13.125
13.125
13.125
13.125
15
15
tRP
(ns)
13.125
13.125
13.125
13.125
15
15
tRC
(ns)
47.125
48.125
49.125
50.625
52.5
52.5
PDF: 09005aef846206a0
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




Micron

MT16KTF51264HZ Datasheet Preview

MT16KTF51264HZ Datasheet

4GB 1.35V DDR3L SDRAM SODIMM

No Preview Available !

4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM
Features
Table 2: Addressing
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
4GB
8K
32K A[14:0]
8 BA[2:0]
2Gb (256 Meg x 8)
1K A[9:0]
2 S#[1:0]
8GB
8K
64K A[15:0]
8 BA[2:0]
4Gb (512 Meg x8)
1K A[9:0]
2 S#[1:0]
Table 3: Part Numbers and Timing Parameters – 4GB Modules
Base device: MT41K256M8,1 2Gb 1.35V DDR3L SDRAM
Part Number2
Module
Density
Configuration
MT16KTF51264HZ-1G6__
4GB 512 Meg x 64
MT16KTF51264HZ-1G4__
4GB 512 Meg x 64
Module
Bandwidth
12.8 GB/s
10.6 GB/s
Memory Clock/
Data Rate
1.25ns/1600 MT/s
1.5ns/1333 MT/s
Clock Cycles
(CL-tRCD-tRP)
11-11-11
9-9-9
Table 4: Part Numbers and Timing Parameters – 8GB Modules
Base device: MT41K512M8,1 4Gb 1.35V DDR3L SDRAM
Part Number2
Module
Density
Configuration
MT16KTF1G64HZ-1G9__ 8GB 1 Gig x 64
MT16KTF1G64HZ-1G6__ 8GB 1 Gig x 64
MT16KTF1G64HZ-1G4__ 8GB 1 Gig x 64
Module
Bandwidth
14.9 GB/s
12.8 GB/s
10.6 GB/s
Memory Clock/
Data Rate
1.07ns/1866 MT/s
1.25ns/1600 MT/s
1.5ns/1333 MT/s
Clock Cycles
(CL-tRCD-tRP)
13-13-13
11-11-11
9-9-9
Notes: 1. The data sheet for the base device can be found on Micron’s web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT16KTF1G64HZ-1G9N1.
PDF: 09005aef846206a0
ktf16c512_1gx64hz.pdf - Rev. K 7/15 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.


Part Number MT16KTF51264HZ
Description 4GB 1.35V DDR3L SDRAM SODIMM
Maker Micron
Total Page 21 Pages
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