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Micron

MT18LSDT12872A Datasheet Preview

MT18LSDT12872A Datasheet

1GB Synchronous DRAM Module

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512MB (SR), 1GB (DR): (x72, ECC) 168-Pin SDRAM UDIMM
Features
Synchronous DRAM Module
MT9LSDT6472A - 512MB
MT18LSDT12872A - 1GB
For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/modules.
Features
• PC100- and PC133-compliant
• 168-pin, dual in-line memory module (DIMM)
• Unbuffered, ECC-optimized pinout
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• Single +3.3V power supply
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal SDRAM banks for hiding row access/
precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto precharge, includes concurrent auto
precharge, and auto refresh modes
• Self refresh mode
• 64ms, 8,192-cycle refresh
• LVTTL-compatible inputs and outputs
• Serial presence-detect (SPD)
• Gold edge contacts
Table 1:
Timing Parameters
CL = CAS (READ) latency
Access Time
Module Clock
Setup
Marking Frequency CL = 2 CL = 3 Time
-13E
-133
133 MHz 5.4ns –
133 MHz – 5.4ns
1.5
1.5
Hold
Time
0.8
0.8
Figure 1: 168-Pin DIMM (MO-161)
Standard 1.375in./34.93mm
Low Profile 1.125in./28.58mm
Options
• Package
168-pin DIMM (standard)
168-pin DIMM (lead-free)
• Frequency/CAS latency
7.5ns (133 MHz)/CL = 2
7.5ns (133 MHz)/CL = 3
• PCB
Standard (1.375in./34.93mm)
Low-Profile (1.125in./28.58mm)
Marking
G
Y1
-13E
-133
See note 1 on
page 2
See note 1 on
page 2
Notes: 1. Contact Micron for product availability.
Table 2: Address Table
Parameter
Refresh Count
Device Banks
Device Configuration
Row Addressing
Column Addressing
Module Ranks
512MB
8K
4 (BA0, BA1)
512Mb (64 Meg x 8)
8K (A0–A12)
2K (A0–A9, A11)
1 (S0#, S2#)
1GB
8K
4 (BA0, BA1)
512Mb (64 Meg x 8)
8K (A0–A12)
2K (A0–A9, A11)
2 (S0#, S2#; S1#, S3#)
PDF: 09005aef8088b1bf/Source: 09005aef808807ca
SD9_18C64_128X72AG.fm - Rev. C 6/05 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




Micron

MT18LSDT12872A Datasheet Preview

MT18LSDT12872A Datasheet

1GB Synchronous DRAM Module

No Preview Available !

512MB (SR), 1GB (DR): (x72, ECC) 168-Pin SDRAM UDIMM
Features
Table 3: Part Numbers
Part Number1
Module Density
Configuration
System Bus
Speed
MT9LSDT6472AG-13E_
MT9LSDT6472AG-13E_
MT9LSDT6472AG-133_
MT9LSDT6472AG-133_
MT18LSDT12872AG-13E_
MT18LSDT12872AG-13E_
MT18LSDT12872AG-133_
MT18LSDT12872AG-133_
512MB
512MB
512MB
512MB
1GB
1GB
1GB
1GB
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
133 MHz
133 MHz
133 MHz
133 MHz
133 MHz
133 MHz
133 MHz
133 MHz
Notes: 1. The designators for component and PCB revision are the last two characters of each part
number Consult factory for current revision codes. Example: MT9LSDT6472AG-133B1.
PDF: 09005aef8088b1bf/Source: 09005aef808807ca
SD9_18C64_128X72AG.fm - Rev. C 6/05 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002 Micron Technology, Inc. All rights reserved.



Part Number MT18LSDT12872A
Description 1GB Synchronous DRAM Module
Maker Micron
Total Page 29 Pages
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