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MT18VDDF12872H Datasheet Preview

MT18VDDF12872H Datasheet

1GB DDR SDRAM SODIMM

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1GB (x72, ECC, DR) 200-Pin DDR SDRAM SODIMM
Features
DDR SDRAM SODIMM
MT18VDDF12872H – 1GB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• VDD = VDDQ = +2.5V
(-40B: VDD = VDDQ = +2.6V)
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
• Selectable burst lengths (BL) 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
• Dual rank
• Gold edge contacts
Figure 1: 200-Pin SODIMM (MO-224)
PCB height: 31.75mm (1.25in)
Options
Marking
• Operating temperature1
Commercial (0°C TA +70°C)
Industrial (–40°C TA +85°C)
• Package
None
I
200-pin DIMM (standard)
G
200-pin DIMM (Pb-free)
Y
• Memory clock, speed, CAS latency
5.0ns (200 MHz), 400 MT/s, CL = 3
-40B
6.0ns (167 MHz), 333 MT/s, CL = 2.5
7.5ns (133 MHz), 266 MT/s, CL = 22
7.5ns (133 MHz), 266 MT/s, CL = 2.52
-335
-26A
-265
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. Not recommended for new designs.
Table 1:
Speed
Grade
-40B
-335
-26A
-265
Key Timing Parameters
Industry
Nomenclature
PC3200
PC2700
PC2100
PC2100
Data Rate (MT/s)
CL = 3
400
CL = 2.5
333
333
266
266
CL = 2
266
266
266
200
tRCD
(ns)
15
18
20
20
tRP
(ns)
15
18
20
20
tRC
(ns)
55
60
65
65
PDF: 09005aef80e4880c/Source: 09005aef80e487d7
DDF18C128x72H.fm - Rev. B 10/07 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




Micron

MT18VDDF12872H Datasheet Preview

MT18VDDF12872H Datasheet

1GB DDR SDRAM SODIMM

No Preview Available !

1GB (x72, ECC, DR) 200-Pin DDR SDRAM SODIMM
Features
Table 2: Addressing
Parameter
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
1GB
8K
8K (A0–A12)
4 (BA0, BA1)
512Mb (64 Meg x 8)
2K (A0–A9, A11)
2 (S0#, S1#)
Table 3:
Part Numbers and Timing Parameters – 1GB
Base device: MT46V64M8,1 512Mb DDR SDRAM
Part Number2
MT18VDDF12872HG-40B__
MT18VDDF12872HY-40B__
MT18VDDF12872HG-335__
MT18VDDF12872HY-335__
MT18VDDF12872HG-26A__
MT18VDDF12872HG-265__
Module
Density
1GB
1GB
1GB
1GB
1GB
1GB
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
Module
Bandwidth
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
Memory Clock/
Data Rate
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Clock Cycles
(CL-tRCD-tRP)
3-3-3
3-3-3
2.5-3-3
2.5-3-3
2-3-3
2.5-3-3
Notes:
1. Data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT18VDDF12872HY-335F1.
PDF: 09005aef80e4880c/Source: 09005aef80e487d7
DDF18C128x72H.fm - Rev. B 10/07 EN
2 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.


Part Number MT18VDDF12872H
Description 1GB DDR SDRAM SODIMM
Maker Micron
Total Page 10 Pages
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